Quantum-Dot Lasers Grown on CMOS-compatible 300 mm Si Photonic Wafers

Abstract

We demonstrate the first electrically injected quantum dot lasers directly grown on recessed and patterned 300 mm Si photonic wafers, with CW lasing maximum output power higher than 69 mW at 20 °C. This result shows potential for direct heteroepitaxial integration of III–V gain elements onto CMOS-compatible silicon photonic circuits.