Reliability analysis of BiCMOS SiGe:C technology under aggressive conditions for emerging RF and mm-Wave applications

2017 12th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2017-10-01 DOI:10.1017/S1759078718000624

Insaf Lahbib, S. Wane, D. Lesenechal, A. Doukkali, T. Dinh, L. Leyssenne, R. Germanicus, F. Bezerra, G. Rolland, C. Andrei, G. Imbert, Patrick Martin, P. Descamps, G. Boguszewski, D. Bajon

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Abstract

In this contribution, impact of extreme environmental conditions in terms of energy-level radiation of protons on SiGe integrated circuits is experimentally studied. Canonical representative structures including linear (passive interconnects/antennas) and non-linear (Low Noise Amplifiers) are used as carriers for assessing impact of aggressive stress conditions on their performances. Perspectives for holistic Modeling and Characterization approaches accounting for various interaction mechanisms (substrate resistivity variations, couplings/interferences, drift in DC and RF characteristics, for actives are down to allow for optimal solutions in pushing SiGe technologies toward applications with harsh and radiation-intense environments (e.g., Space, Nuclear, Military). Specific design prototypes are built for assessing mission-critical profiles for emerging RF and mm-Wave applications.

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新兴射频和毫米波应用条件下BiCMOS SiGe:C技术的可靠性分析

本文从质子能级辐射的角度，实验研究了极端环境条件对SiGe集成电路的影响。典型的代表性结构包括线性(无源互连/天线)和非线性(低噪声放大器)作为载体，用于评估侵略性应力条件对其性能的影响。考虑到各种相互作用机制(衬底电阻率变化、耦合/干扰、直流和射频特性漂移)的整体建模和表征方法的观点有所下降，以便为将SiGe技术推向恶劣和辐射强环境(例如，太空、核、军事)的应用提供最佳解决方案。为评估新兴射频和毫米波应用的关键任务配置文件，构建了特定的设计原型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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