Investigations of Low Dynamic Ron on GaN/AlGaN/GaN HEMT by Field Plate Using Physical Device Simulations

Abstract

This study examines the effects of field plate structure with gallium nitrite cap contact scheme and inter layer dielectric (ILD) as nitride on the performance of GaN/AlGaN/GaN High electron mobility transistor (HEMT). We have exhibited the prominent results at the peak of electric field happened on the hot spot region. This indicates that the field plate can help to suppress the peak of electric field at the verge of the gate towards drain. The key advantage is rise of the breakdown voltage with low electric peak field. These Synopsys Technology Computer Aided Design (TCAD) simulated results clearly show that besides field plate design dielectric material thickness also plays a vital role to obtain low dynamic Ron ratio.