Diluting monolayers in molecular diodes to enhance their electrical properties

R. Sullivan, O. Jurchescu, M. Welker, J. T. Morningstar
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Abstract

We report on the electrical properties of a series of molecular rectifiers based on benzalkylsilane molecules in self-assembled monolayers (SAMs) anchored to silicon substrates with a native layer of SiO2. Mixed SAMs were formed via co-absorption where known amounts of aliphatic silane-based impurities were included into the rectifying SAMs. We discovered that in spite of the fact that the degree of order within the SAMs decreased upon dilution the impurity (3-aminopropyl)triethoxysilane enhanced the rectification for several SAMs. The largest change resulted in a three-fold increase for an average rectification of 4500; the highest reported rectification for SAMs assembled on silicon to date. We attribute this novel behavior to a new molecular configuration within the SAM that allows more efficient coupling between the delocalized electrons of the SAM and the device electrode. Understanding how to optimize SAMs will allow for more functionable, integrable and cost-efficient devices.
稀释分子二极管中的单层以提高其电性能
我们报道了一系列基于自组装单层(SAMs)中的苯并烷基硅烷分子的分子整流器的电学性能,这些分子整流器与天然SiO2层固定在硅衬底上。混合SAMs是通过共吸收形成的,其中已知数量的脂肪族硅烷基杂质被包括在精馏SAMs中。我们发现,尽管在稀释后SAMs内部的有序度降低,但杂质(3-氨基丙基)三乙氧基硅烷增强了几种SAMs的精馏。最大的变化导致平均纠正量增加了3倍,平均纠正量为4500;这是迄今为止在硅上组装的地对空导弹的最高整改记录。我们将这种新行为归因于SAM内部的新分子结构,该结构允许SAM的离域电子与器件电极之间更有效地耦合。了解如何优化SAMs将允许更多功能,可集成和成本效益的设备。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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