Failure mode of different irradiated power IGBT structures

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698988

E. Lorfèvre, E. Dachs, C. Detcheverry, C. Sudre, F. Roubaud, J. Palau, J. Gasiot, M. Calvet, R. Ecoffets

引用次数: 9

Abstract

A 2D-simulation investigation determines the heavy ion failure mode of three different IGBT structures. The sensitivities of a N-channel IGBT, with and without n+ buffer and of a P-channel IGBT are compared in simulation.

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不同辐照功率IGBT结构的失效模式

二维模拟研究确定了三种不同的IGBT结构的重离子失效模式。仿真比较了n通道IGBT在带n+缓冲器和不带n+缓冲器的情况下和p通道IGBT的灵敏度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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