Characterization of electrical linewidth test structures patterned in [100] silicon-on-insulator for use as CD standards

Abstract

This paper describes the fabrication and measurement of the linewidths of the reference segments of cross-bridge resistors patterned in [100] Bonded and Etched Back Silicon-on-Insulator (BESOI) material. The critical dimensions (CD) of the reference segments of a selection of the cross-bridge resistor test structures were measured both electrically and by Scanning-Electron Microscopy (SEM) cross-section imaging.