High frequency considerations for multi-point contact interfaces

R. Malucci, Molex
{"title":"High frequency considerations for multi-point contact interfaces","authors":"R. Malucci, Molex","doi":"10.1109/HOLM.2001.953207","DOIUrl":null,"url":null,"abstract":"A statistical model based on random variations of surface features was used to estimate the resistance and capacitance of a typical multi-point contact interface. Values for clean and degraded contacts were calculated and show that, as a contact degrades, the resistance goes up and the capacitance initially rises and then falls as a film grows at the contact interface. Moreover, data were provided that show consistency with predictions from the statistical model. In addition, measurements of the skin effect on series resistance, including contact resistance, were conducted and show a power law frequency dependence of both bulk and contact resistance. While these data appear consistent with the analysis, it is believed that the measurement and analysis techniques can be improved to provide more accurate results. Moreover, the results reveal that high frequency data transmission can be affected by the impedance of a degraded contact interface. While the latter was not fully quantified, this study showed the levels where degradation may impact high frequency signal propagation. It is believed that further refinement of the techniques used in this study will help quantify high frequency effects from the impedance of a multi-point contact interface.","PeriodicalId":136044,"journal":{"name":"Proceedings of the Forth-Seventh IEEE Holm Conference on Electrical Contacts (IEEE Cat. No.01CH37192)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"42","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the Forth-Seventh IEEE Holm Conference on Electrical Contacts (IEEE Cat. No.01CH37192)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HOLM.2001.953207","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 42

Abstract

A statistical model based on random variations of surface features was used to estimate the resistance and capacitance of a typical multi-point contact interface. Values for clean and degraded contacts were calculated and show that, as a contact degrades, the resistance goes up and the capacitance initially rises and then falls as a film grows at the contact interface. Moreover, data were provided that show consistency with predictions from the statistical model. In addition, measurements of the skin effect on series resistance, including contact resistance, were conducted and show a power law frequency dependence of both bulk and contact resistance. While these data appear consistent with the analysis, it is believed that the measurement and analysis techniques can be improved to provide more accurate results. Moreover, the results reveal that high frequency data transmission can be affected by the impedance of a degraded contact interface. While the latter was not fully quantified, this study showed the levels where degradation may impact high frequency signal propagation. It is believed that further refinement of the techniques used in this study will help quantify high frequency effects from the impedance of a multi-point contact interface.
多点接触接口的高频考虑
采用基于表面特征随机变化的统计模型估计了典型多点接触界面的电阻和电容。计算了清洁触点和降解触点的值,结果表明,随着触点的降解,电阻上升,电容开始上升,然后随着触点界面上薄膜的生长而下降。此外,提供的数据显示与统计模型的预测一致。此外,对串联电阻(包括接触电阻)的集肤效应进行了测量,并显示了体积电阻和接触电阻的幂律频率依赖性。虽然这些数据似乎与分析一致,但人们相信,测量和分析技术可以得到改进,以提供更准确的结果。此外,研究结果还表明,接触界面的阻抗退化会影响高频数据的传输。虽然后者没有完全量化,但本研究显示了退化可能影响高频信号传播的水平。相信本研究中使用的技术的进一步改进将有助于量化多点接触界面阻抗的高频效应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信