On the mathematical modeling of memcapacitor bridge synapses

M. Fouda, A. Radwan
{"title":"On the mathematical modeling of memcapacitor bridge synapses","authors":"M. Fouda, A. Radwan","doi":"10.1109/ICM.2014.7071834","DOIUrl":null,"url":null,"abstract":"Mem-element based synaptic bridge is very promising topic due to its learning capability where the synaptic bridge can be build using either memristors or memcapacitors. In this paper, the detailed mathematical analysis of memcapacitor bridge circuit is introduced. This mathematical analysis is build when a current input signal is applied to excite the bridge. Closed form expressions for the required pulse width; synaptic weight; and conditions for positive, negative and zero synaptic weight are derived. The obtained expressions are verified using SPICE simulations showing very good matching.","PeriodicalId":107354,"journal":{"name":"2014 26th International Conference on Microelectronics (ICM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 26th International Conference on Microelectronics (ICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2014.7071834","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

Mem-element based synaptic bridge is very promising topic due to its learning capability where the synaptic bridge can be build using either memristors or memcapacitors. In this paper, the detailed mathematical analysis of memcapacitor bridge circuit is introduced. This mathematical analysis is build when a current input signal is applied to excite the bridge. Closed form expressions for the required pulse width; synaptic weight; and conditions for positive, negative and zero synaptic weight are derived. The obtained expressions are verified using SPICE simulations showing very good matching.
memcapacitor桥突触的数学建模
基于mems元件的突触桥是一个非常有前途的课题,因为它具有学习能力,其中突触桥可以使用记忆电阻器或记忆电容来构建。本文对记忆电容桥电路进行了详细的数学分析。这种数学分析是在电流输入信号激发电桥时建立的。所需脉冲宽度的封闭形式表达式;突触的重量;并推导出突触权正、负和零的条件。通过SPICE仿真验证了所得表达式的拟合性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信