Thermoelectric properties of hole doped FeSb/sub 2/

A. Bentien, G. Madsen, S. Johnsen, B. Iversen
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引用次数: 1

Abstract

FeSb/sub 2/ is a diamagnetic semiconductor where the Fe 3d levels are located just below the band gap. A series of systematically Sn substituted FeSb/sub 2-x/Sn/sub x/ samples with x = 0-0.15 has been synthesized and we explore the thermoelectric properties of these samples as the Fermi level is shifted down into the region of the Fe 3d levels.
空穴掺杂FeSb/ sub2 /的热电性能
FeSb/sub 2/是一种抗磁性半导体,其中Fe 3d能级位于带隙下方。合成了一系列有系统的Sn取代的FeSb/sub - 2-x/Sn/sub -x/样品,x = 0-0.15,我们探索了这些样品在费米能级下移到Fe三维能级区域时的热电性质。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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