Effects of Parasitic Elements on LC/CL Matching Circuits

Satoshi Tanaka, T. Yoshida, M. Fujishima
{"title":"Effects of Parasitic Elements on LC/CL Matching Circuits","authors":"Satoshi Tanaka, T. Yoshida, M. Fujishima","doi":"10.1109/ITC-CSCC58803.2023.10212852","DOIUrl":null,"url":null,"abstract":"L-type LC/CL matching circuits are well known for their simple analytical solutions, and have been applied to many RF circuits. In the actual circuit, parasitic elements are added to inductors and capacitors. Therefore, each $L$ and $C$ element has a self-resonant frequency, which affects the characteristics of the matching circuit. In this paper, the parallel parasitic capacitance to the inductor and the series parasitic inductor to the capacitance are taken up as parasitic elements, and the details of the effects of the self-resonant frequency of each element on the $S_{11}$, VSWR (voltage standing wave ratio) and $S_{21}$ characteristics are reported. When a parasitic element is added, each characteristic basically tends to deteriorate as the self-resonant frequency decreases. However, as an interesting feature, we found that the combination of resonant frequencies determines the VSWR and passband characteristics, regardless of whether it is the inductor or the capacitor.","PeriodicalId":220939,"journal":{"name":"2023 International Technical Conference on Circuits/Systems, Computers, and Communications (ITC-CSCC)","volume":"8 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 International Technical Conference on Circuits/Systems, Computers, and Communications (ITC-CSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ITC-CSCC58803.2023.10212852","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

L-type LC/CL matching circuits are well known for their simple analytical solutions, and have been applied to many RF circuits. In the actual circuit, parasitic elements are added to inductors and capacitors. Therefore, each $L$ and $C$ element has a self-resonant frequency, which affects the characteristics of the matching circuit. In this paper, the parallel parasitic capacitance to the inductor and the series parasitic inductor to the capacitance are taken up as parasitic elements, and the details of the effects of the self-resonant frequency of each element on the $S_{11}$, VSWR (voltage standing wave ratio) and $S_{21}$ characteristics are reported. When a parasitic element is added, each characteristic basically tends to deteriorate as the self-resonant frequency decreases. However, as an interesting feature, we found that the combination of resonant frequencies determines the VSWR and passband characteristics, regardless of whether it is the inductor or the capacitor.
寄生元件对LC/CL匹配电路的影响
l型LC/CL匹配电路以其简单的解析解而闻名,并已应用于许多射频电路中。在实际电路中,寄生元件被添加到电感和电容器中。因此,每个$L$和$C$元件都有一个自谐振频率,影响匹配电路的特性。本文以电感并联寄生电容和电感串联寄生电容为寄生元件,详细报道了各元件的自谐振频率对S_{11}$、驻波比VSWR和S_{21}$特性的影响。当加入寄生元件时,随着自谐振频率的降低,各特性基本趋于恶化。然而,作为一个有趣的特征,我们发现谐振频率的组合决定了VSWR和通带特性,无论是电感还是电容。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信