A peripheral switchable 3D stacked CMOS image sensor

C. Liu, Chin-Hao Chang, H. Tu, C. Chao, F. Hsueh, Szu-Ying Chen, Vincent Hsu, Jen-Cheng Liu, D. Yaung, S. Wuu
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引用次数: 3

Abstract

A 1.1 um pitch pixel array fabricated by 45 nm 3D stacked technology, can be switched to peripheral circuits on same wafer or to other stacked wafer for process and signal integrity verification. It supports through silicon connection or direct connection to increase the flexibility by separating pixel array and sensing circuit. The novel wide operation range VCO and low power serializer are implemented to reduce the total power and noise.
外围可切换的3D堆叠CMOS图像传感器
采用45纳米3D堆叠技术制造的1.1 μ m间距像素阵列,可切换到同一晶圆上的外围电路或其他堆叠晶圆上进行工艺和信号完整性验证。它支持通过硅连接或直接连接,通过将像素阵列和传感电路分离来增加灵活性。采用新颖的宽工作范围压控振荡器和低功率串行器,降低了总功率和噪声。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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