Compact signed-digit adder using multiple-valued logic

Alejandro F. González, P. Mazumder
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引用次数: 6

Abstract

As minimum feature sizes shrink and the number of transistors integrated in a single chip grow, interconnect complexity is one of the most important issues to be solved in future VLSI chips. The use of multivalued logic is one way to effectively solve this problem because multiple-valued signals convey more information than binary signals and thus, require a lower number of interconnecting wires to achieve similar bandwidths. This paper describes a new signed-digit adder design, which uses multiple-valued logic. The circuit is composed of resonant-tunneling diodes (RTDs) and MOS transistors. The negative differential-resistance (NDR) characteristics of RTDs help to achieve very compact circuits for implementing the multiple-valued functions found in signed-digit adders, MOS transistors are useful for implementing current-mode logic, in which addition of two or more signals is performed by simple wire interconnection. Since a redundant arithmetic is being used the selected transfer functions allow the proposed circuit to perform addition where no ripple-carry effect is present. The design was verified using circuit simulation. To demonstrate the validity of the principles being used, a modified prototype of the circuit was built. In the prototype, a standard 2-micron CMOS process was used to fabricate the MOS-based circuitry while RTDs were connected externally. Even though no fabrication processes which integrate RTDs and MOS devices are currently available, there are efforts on the development of such technologies so that the advantages of these devices can be combined.
使用多值逻辑的紧凑符号数字加法器
随着最小特征尺寸的缩小和单芯片中集成的晶体管数量的增加,互连复杂性是未来VLSI芯片需要解决的最重要问题之一。使用多值逻辑是有效解决这个问题的一种方法,因为多值信号比二进制信号传递更多的信息,因此,需要更少的互连线来实现相似的带宽。本文介绍了一种新的采用多值逻辑的符号加法器设计。该电路由谐振隧道二极管(rtd)和MOS晶体管组成。rtd的负差分电阻(NDR)特性有助于实现非常紧凑的电路,以实现符号加法器中的多值函数,MOS晶体管可用于实现电流模式逻辑,其中两个或多个信号的加法通过简单的线互连来执行。由于使用了冗余算法,因此所选的传递函数允许所建议的电路在没有纹波携带效应的情况下执行加法。通过电路仿真验证了设计的正确性。为了证明所使用的原理的有效性,建立了一个改进的电路原型。在原型中,使用标准的2微米CMOS工艺来制造基于mos的电路,而rtd则外部连接。尽管目前还没有集成rtd和MOS器件的制造工艺,但人们正在努力开发这些技术,以便将这些器件的优势结合起来。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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