Stimulated Raman scattering in one-dimensional Mott-Hubbard insulators: a novel THz source

Abstract

One dimensional Mott-Hubbard insulators are modeled within 2-band extended Hubbard model. The model is solved exactly numerically for finite lattice. These numerical data are used to compute various nonlinear susceptibilities like third Harmonic generation, two photon absorption, electro absorption as well as the stimulated Raman scattering. The stimulated Raman scattering susceptibility for three one-dimensional Mott-Hubbard insulators is found to be very large even compared to other nonlinear optical susceptibilities. This is the first ever study on stimulated Raman scattering of one dimensional strongly correlated systems. This leads to a potential for strong Stokes generation in the THz regime from these compounds.