DC and RF Analysis of AlGaN/GaN MOS-HEMT for High Power Application

Abstract

A novel AlGaN/GaN metal-oxide-semiconductor High-electron mobility transistor (MOS-HEMT) using Hf02 as a gate dielectric, grown on a silicon substrate was successfully designed and simulated. In this, we have shown the comparison between HEMT and MOS-HEMT, which eventually proves MOS-HEMT is better than HEMT in certain cases. Different Significant study has been made on gate oxides such as SiO2, Gd2O3, Al2O3, etc but Hf02 was proved to be efficient in reduction of leakage current on GaN-based platforms [3], [4]. Here based on the device performance, Ids of MOS-HEMT is 0.25 A at VGS =6 V is comparatively higher than HEMT which is 0.2 A. The resulted MOS-HEMT also shows improved characteristics of drain current 0.38 A at Vgs= 0 and Vds= 5, hip-her than HEMT.