Measurement of lateral diffusion on technologies with polysilicon doping source with misalignment correction

Abstract

A novel test structure consisting of a varying length depletion IGFET (insulated-gate field effect transistor) with a shorted polysilicon gate-source junction is presented. This structure makes it possible to extract an effective channel length from an electrical measurement and, as a result, the amount of lateral diffusion on its source junction is extracted. A particular arrangement of the gate and source shorts is selected to eliminate misalignment errors.<>