M. Boumaour, A. Bahfir, S. Sali, S. Kermadi, L. Zougar, N. Ouarab
{"title":"Innovative emitter design for low-cost silicon based heterostructure solar cells","authors":"M. Boumaour, A. Bahfir, S. Sali, S. Kermadi, L. Zougar, N. Ouarab","doi":"10.1109/NAWDMPV.2014.6997604","DOIUrl":null,"url":null,"abstract":"N+ transparent conductor oxides (TCO's) can be a valuable and low-cost alternative to conventional thermally diffused emitter of silicon based solar cells. With reduced resistivities by appropriate doping and considering lattice mismatch and energy band offsets at the interface with p-silicon substrate, predictive study by numerical simulation shows comparable performance between ZnS:Al and TiO2:Nb with conversion efficiencies >16%. Furthermore, a back surface field achieved by a thin Sb2Te3 can enhance the efficiency with values higher than 18.5%.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAWDMPV.2014.6997604","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
N+ transparent conductor oxides (TCO's) can be a valuable and low-cost alternative to conventional thermally diffused emitter of silicon based solar cells. With reduced resistivities by appropriate doping and considering lattice mismatch and energy band offsets at the interface with p-silicon substrate, predictive study by numerical simulation shows comparable performance between ZnS:Al and TiO2:Nb with conversion efficiencies >16%. Furthermore, a back surface field achieved by a thin Sb2Te3 can enhance the efficiency with values higher than 18.5%.