Advanced diamond based metal matrix composites for thermal management of RF devices

Abstract

GaN based RF devices are pushing the threshold on existing thermal management materials. High heat fluxes and the need for a heat spreader material with low CTE that is a close match to the device material (e.g. Silicon Carbide) is driving the need for higher thermal conductivity (>450W/mK) solutions. Aluminum diamond has been developed to meet this need with a CTE of 7.5ppm/K and thermal conductivity of 500W/mK.