A simple method to simulate polymer field-effect transistors

Abstract

The paper describes a simple method for simulating organic field-effect transistors. In contrast to so far developed models, which require modifications of the source code of the simulator, we propose a model which uses a gate voltage dependent charge carrier mobility. This approach can be implemented in conventional drift-diffusion device simulator. The verification of this method was performed with "bottom contact"(BOC) polymer field-effect transistors and the device simulator "SIMBA" [1]. The simulation results are in good agreement with the measurements.