M. Pasotti, G. De Sandre, D. Iezzi, D. Lena, G. Muzzi, M. Poles, P. Rolandi
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引用次数: 7
Abstract
A 8 Mb application-specific embeddable flash memory is presented. It features 3 content-specific I/O ports, delivers a peak read throughput of 1.2 GB/S, and, combined with a special automatic programming gate voltage ramp generator circuit, a programming rate of 1Mbyte/s for non-volatile storage of code, data and embedded FPGA bit stream configurations. The test chip has been designed using a NOR type 0.18 /spl mu/m flash embedded technology with 1.8 V power supply, 2 poly, 6 metal and memory cell size of 0.35 /spl mu/m/sup 2/.