High Linearity Front-End Circuit for RF Sampling ADCs with Nonlinear Junction Capacitor Cancellation

Yihang Cheng, Yaning Wang, Fule Li, Chun Zhang, Zhihua Wang
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Abstract

This paper presents a high linearity front-end circuit for RF sampling ADCs, including an input buffer and a sampling network. The input buffer uses a two-stage NMOS cascode structure and is powered by a separate LDO to support a larger signal swing input with high power supply rejection (PSR) and linearity. We use bootstrap switch with bulk-switching techniques to ensure sampling linearity, while a feed-through compensation technique with self-cancellation of nonlinear junction capacitor is applied to achieve better performance at high-frequency inputs. The above techniques are validated at a 1GS/s ADC in 65nm process, and the simulation results show that the low-frequency PSR of the input buffer reaches over 120dB, and the SNR, SNDR and SFDR of the overall front-end circuit are 78.74dB, 72.37dB and 75.37dB at 2GHz frequency 1.6Vpp input. The −3dB bandwidth of the front-end circuit achieves 4.4GHz.
具有非线性结电容抵消的射频采样adc的高线性前端电路
本文提出了一种用于射频采样adc的高线性前端电路,包括输入缓冲器和采样网络。输入缓冲器采用两级NMOS级联编码结构,并由单独的LDO供电,以支持具有高电源抑制(PSR)和线性度的较大信号摆幅输入。我们采用自举开关和批量开关技术来保证采样线性度,同时采用非线性结电容自抵消的馈通补偿技术来获得更好的高频输入性能。在65nm制程的1GS/s ADC上对上述技术进行了验证,仿真结果表明,输入缓冲器的低频PSR达到120dB以上,在2GHz频率1.6Vpp输入时,整个前端电路的信噪比、SNDR和SFDR分别为78.74dB、72.37dB和75.37dB。−3dB前端电路带宽达到4.4GHz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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