Electromigration, fuse and thermo-mechanical performance of solder bump versus Cu pillar flip chip assemblies

B. Vandevelde, R. Labie, V. Cherman, T. Webers, C. Winters, E. Beyne, F. Dosseul
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引用次数: 2

Abstract

Two different flip chip bump configurations have been investigated in terms of their thermo-mechanical, electromigration and fusing behaviour. Standard SAC (SnAgCu) solder bumps with a Ni/Au finish on the chip side are compared with Cu pillar bumps soldered with a thin layer of SnAg alloy. For the test structure, the flip chip assembly is integrated in a BGA package. Finite Element Modelling is used to support the experimental work and explain some of the conclusions.
电迁移,熔断器和热机械性能的焊料碰撞与铜柱倒装芯片组件
研究了两种不同的倒装芯片碰撞结构的热力学、电迁移和熔合行为。标准SAC (SnAgCu)焊料凸点与芯片侧Ni/Au涂层的铜柱凸点进行了比较,并焊接了一层薄薄的SnAg合金。对于测试结构,倒装芯片组件集成在BGA封装中。有限元模型被用来支持实验工作和解释一些结论。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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