{"title":"Layout Parameter Analysis of a CMOS LSI","authors":"R. Halliwell","doi":"10.1109/ESSCIRC.1980.5468736","DOIUrl":null,"url":null,"abstract":"Description of computer program to verify that design requirements for speed were met by the custom layout of an oxide isolated CMOS LSI.","PeriodicalId":168272,"journal":{"name":"ESSCIRC 80: 6th European Solid State Circuits Conference","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 80: 6th European Solid State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1980.5468736","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Description of computer program to verify that design requirements for speed were met by the custom layout of an oxide isolated CMOS LSI.