Y. Yim, Kwang-Shik Shin, S. Hur, Jaeduk Lee, Ihn-Gee Balk, H. Kim, Soo-Jin Chai, Eunkyeong Choi, Mincheol Park, D. Eun, Sungyeon Lee, Hye-Jin Lim, S. Youn, Sungyeon Lee, Tae-Jung Kim, Hansoo Kim, Kyucharn Park, Ki-Nam Kim
{"title":"70nm NAND flash technology with 0.025 /spl mu/m/sup 2/ cell size for 4Gb flash memory","authors":"Y. Yim, Kwang-Shik Shin, S. Hur, Jaeduk Lee, Ihn-Gee Balk, H. Kim, Soo-Jin Chai, Eunkyeong Choi, Mincheol Park, D. Eun, Sungyeon Lee, Hye-Jin Lim, S. Youn, Sungyeon Lee, Tae-Jung Kim, Hansoo Kim, Kyucharn Park, Ki-Nam Kim","doi":"10.1109/IEDM.2003.1269405","DOIUrl":null,"url":null,"abstract":"A 4 Gb NAND flash memory with a 70 nm design rule is developed for mass storage applications. The cell size is 0.025 /spl mu/m/sup 2/, which is the smallest value ever reported. For the integration, an ArF lithography process along with resolution enhancing techniques was utilized, and poly-Si/W gate technology with an optimized re-oxidation process was implemented.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269405","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
A 4 Gb NAND flash memory with a 70 nm design rule is developed for mass storage applications. The cell size is 0.025 /spl mu/m/sup 2/, which is the smallest value ever reported. For the integration, an ArF lithography process along with resolution enhancing techniques was utilized, and poly-Si/W gate technology with an optimized re-oxidation process was implemented.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
