{"title":"Строение комплекса SiCl\n \n 4\n \n ←O=C[N(CH\n \n 3\n \n )\n \n 2\n \n ]\n \n 2\n \n и перераспределение электронной плотности при его образовании по результатам расчетов\n \n ab initio","authors":"В. П. Фешин, Е. В. Фешина","doi":"10.1134/S0044457X19090113","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":360124,"journal":{"name":"Журнал неорганической химии","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Журнал неорганической химии","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1134/S0044457X19090113","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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