Quantum Well Lasers Using Patterned Growth

Abstract

E. Kapon, C.P Yun, J.P. Harbison, R. Bhat and D.M. Hwang, Bell Communications Research, RedBank, NJ. We describe novel quantum well laser structures that rely on the characteristics of the growth of quantum well heterostructures on nonplanar substrates. Such lasers, grown by molecular beam epitaxy, exhibit very low threshold currents, as low as 1.8mA. Lasers grown by organometallicchemical vapordeposit ion have q uan t u m-w i re-I i ke active reg ions.