Identification of Edge Recombination from CIGS Solar Cells

Abstract

CIGS solar cells has high opportunity to achieve high efficiency. The analysis of efficiency loss plays an important role for efficiency boost. The recombination loss often occurs at junction, bulk, surface, and edge position and leads to solar cell efficiency loss. Electroluminescence from defect-related optical transition is applied for defect analysis in CIGS solar cells. The micro-QE measurement is used for edge recombination analysis and reveals the recombination behavior of CIGS solar cells. EQE response at short wavelength region represents the quality of shallow region along light incident direction and used in the edge recombination study as well as EL intensity distribution.