InGaAs/InP avalanche photodiodes with a thin multiplication layer

Abstract

We report on the design and characterization of a low-noise and low voltage InGaAs/InP avalanche photodiode (APD) grown by metalorganic chemical vapour deposition (MOCVD). The investigated InGaAs/InP APD structure for lightwave transmission systems consists of separate absorption InGaAs, charge InP and InP multiplication layers (SACM). The designed APD without a guard ring exhibits a dark current less than 5 /spl mu/A near the breakdown voltage (V/sub B/ /spl ap/ 48 V). External quantum efficiency >75% (at /spl lambda/ = 1300 nm), avalanche gain up to 5 and capacitance lower than 1.1 pF at the operating voltage were achieved. The measured temperature dependence of current-voltage characteristics, capacitance-voltage and spectral characteristics are presented.