High-Efficiency, High-Power Density and Wide-Range Power Supply Design Based on GaN HEMT

Kesong Zhang, Xikun Chen, Zehui Peng, Yongjian Chen, Guo Wei, S. Ze
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引用次数: 1

Abstract

To enrich the functions of the flyback converter, enable it to achieve high-efficiency and high-power density, and at the same time have more flexibility and apply to more occasions, in this paper, GaN HEMT and transient voltage suppressor (TVS) are used to design a high-efficiency, high-power density, wide-input and wide-output power supply based on quasi-resonant flyback converter (QRFC). To solve the problem that the gate drive voltage requirement of GaN HEMT is different from that of Si-MOSFET, a corresponding drive level conversion circuit is designed. In order to solve the problem of the power supply of the controller when the output is in a wide range, the power supply circuit of the wide-range controller is studied. In view of the cumbersome design and calculation of the traditional resistor capacitor diode (RCD) clamping circuit and the large loss of energy, TVS is used to redesign the clamping circuit to avoid the calculation and selection problems of the clamping capacitor C and the discharge resistance R. The loss is smaller and the design is more convenient. Aiming at the difficulty of designing transformer core and primary inductance when the switching frequency changes, a switching frequency interval estimation method based on the constraints of switching loss and output filter capacitor conditions is proposed to simplify the design of the transformer. The experimental results show that the high-efficiency, high-power density and wide-range power supply designed in this paper can achieve input 90-265VACrms, rated 220VACrms, output 5-15V wide-range adjustable, full load up to 75W, power density up to 17.44 W/inch3, and the highest efficiency can reach 92.6%, and the output ripple voltage is less than 50mV.
基于GaN HEMT的高效率、高功率密度和宽范围电源设计
为了丰富反激变换器的功能,使其能够实现高效率和高功率密度,同时具有更大的灵活性和适用场合,本文采用GaN HEMT和瞬态电压抑制器(TVS)设计了一种基于准谐振反激变换器(QRFC)的高效率、高功率密度、宽输入、宽输出电源。针对GaN HEMT的栅极驱动电压要求与Si-MOSFET不同的问题,设计了相应的驱动电平转换电路。为了解决大量程输出时控制器的供电问题,对大量程控制器的供电电路进行了研究。针对传统电阻电容二极管(RCD)箝位电路设计计算繁琐,能量损耗大的问题,采用TVS对箝位电路进行重新设计,避免了箝位电容C和放电电阻r的计算选择问题,损耗更小,设计更方便。针对开关频率变化时变压器铁芯和初级电感设计困难的问题,提出了一种基于开关损耗和输出滤波电容条件约束的开关频率区间估计方法,简化了变压器的设计。实验结果表明,本文设计的高效率、高功率密度、宽量程电源可实现输入90-265VACrms,额定220VACrms,输出5-15V宽量程可调,满载可达75W,功率密度可达17.44 W/inch3,最高效率可达92.6%,输出纹波电压小于50mV。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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