A multi-contact six-terminal cross-bridge Kelvin resistor (CBKR) structure for evaluation of interface uniformity of the Ti-Al alloy/p-type 4H-SiC contact

Abstract

A multi-contact six-terminal cross-bridge Kelvin resistor (CBKR) structure is proposed to characterize the Ti-Al alloy/p-type 4H-SiC contact. It is confirmed that the test structure can judge the uniformity of the contact interface without destructive analysis such as cross-sectional transmission electron microscopy. Comparing with the results of singlecontact CBKR structure, it is observed that the contact interface is non-uniform and the formation of low resistivity interface depends on the contact area. This area-dependence issue should be solved in order to improve the SiC power devices and CMOS ICs.