Bulk silicon CDMOS technology for an advanced PDP data drvier IC

Abstract

In this paper, the 2nd LEDMOS devices based on bulk silicon(BS) process for an advanced PDP data driver IC have been developed. Not only the on-state characteristics, but also the reliabilities of 2nd LEDMOS transistors such as hot carrier effect, Kirk effect issues are improved against the 1st LEDMOS. The devices can be realized by shrinking the cell size and partly changing the structure of the devices. And by applying the 2nd LEDMOS to the new PDP Driver IC, we have succeeded in reducing the die size of the IC to about 70% comparing with that of 1st one, but its number of output stages is increased by 1.33 times and the power dissipation of the new IC is reduced by more than 15% too.