Buried heterostructure laser diodes using directly bonded InP thin film on silicon substrate

2020 Opto-Electronics and Communications Conference (OECC) Pub Date : 2020-10-04 DOI:10.1109/OECC48412.2020.9273694

Koki Tsushima, Xu Han, T. Ishizaki, Takuto Shirai, Masaki Matsuura, Kota Shibukawa, Keita Fujiwara, Motonari Sato, K. Shimomura

引用次数: 0

Abstract

Successful lasing of buried heterostructure GaInAsP SCH MQW laser diode on silicon substrate has been achieved. BH laser structure was obtained by wet etching and a few steps MOVPE regrowth using directly bonded InP/Si substrate.

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在硅衬底上直接键合InP薄膜的埋置异质结构激光二极管

成功地在硅衬底上发射了埋藏异质结构GaInAsP SCH MQW激光二极管。采用直接键合InP/Si衬底，通过湿法刻蚀和几步法再生MOVPE获得了BH激光结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 Opto-Electronics and Communications Conference (OECC)

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