Are standalone gate size and VT optimization tools useful?

Anitha Kumari Yella, Gunturi Srivatsa, C. Sechen
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引用次数: 2

Abstract

Many algorithms for gate size and threshold voltage (VT) optimization have been proposed. The International Symposium of Physical Design (ISPD) contests for discrete gate sizing with wire loads have led to improved algorithms. However, significant changes in cell sizes require re-placement and re-routing which invalidate the wire loads upon which the sizing was performed. In turn, sizing must be re-performed with new wire loads. To best of our knowledge, it has not been shown how much leakage power reduction can be obtained for actually laid out circuits, nor whether the process even converges. In this work, we chose a gate size and VT optimization algorithm which achieves leakage reduction results comparable to best reported to date for smaller circuits and better results for the largest circuits in the ISPD set. We interfaced the tool with leading EDA tools using a 45nm multi-VT cell library. We propose an incremental placement and routing methodology for use with the EDA placement and routing tool, such that the post-sizing placement and routing converges to the solution achieved after sizing and VT optimization. The flow achieves as much as a 28% leakage reduction with an average reduction of 12% after performing the proposed incremental placement and routing compared to the leading EDA synthesis and layout tool.
独立栅极尺寸和VT优化工具有用吗?
对于栅极尺寸和阈值电压(VT)的优化,已经提出了许多算法。国际物理设计研讨会(ISPD)对带线负载的离散栅极尺寸进行了讨论,并对算法进行了改进。但是,单元格大小的重大变化需要重新放置和重新布线,这会使执行大小调整的线负载失效。反过来,必须使用新的线负载重新执行大小调整。据我们所知,目前还没有证据表明,实际布置的电路可以减少多少泄漏功率,也没有证据表明这个过程是否收敛。在这项工作中,我们选择了一种栅极尺寸和VT优化算法,该算法在较小的电路中实现了与迄今为止报道的最佳泄漏减少结果相当的结果,而在ISPD集中最大的电路中实现了更好的结果。我们使用45nm多vt细胞库将该工具与领先的EDA工具连接起来。我们提出了一种增量放置和路由方法,用于EDA放置和路由工具,使尺寸后的放置和路由收敛到尺寸和VT优化后实现的解决方案。与领先的EDA综合和布局工具相比,在执行了拟议的增量放置和布线后,流量减少了28%的泄漏,平均减少了12%。
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