High-Temperature, High Reliability EEPROM Design For Automotive Applications

IEEE Custom Integrated Circuits Conference 2006 Pub Date : 2006-09-01 DOI:10.1109/CICC.2006.320818

J. Walsh, G. Scott

引用次数: 1

Abstract

An EEPROM has been developed capable of extreme temperature ranges not currently available in the industry. The memory is expected to handle 100K write cycles, 10K of which can be at 175C. To accommodate the reliable operation at the extreme temperature and write-cycle conditions without adding steps to the base process, several cell and system level design techniques were implemented including a differential bit architecture, time and temperature program voltage shaping

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高温、高可靠性汽车EEPROM设计

已经开发出一种EEPROM，能够在目前行业中无法提供的极端温度范围内工作。内存预计可以处理100K个写周期，其中10K可以在175C。为了适应在极端温度和写循环条件下的可靠运行，而不增加基本过程的步骤，采用了几种单元和系统级设计技术，包括差分位结构、时间和温度程序电压整形

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE Custom Integrated Circuits Conference 2006

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