Low Noise Amplifier at Ka Band

Abstract

This paper presents a low noise amplifier (LNA) design methodology and challenges at Ka Band using BiCMOS technology. A two stage single ended cascode narrowband LNA has been designed and fabricated using 130nm technology. A gain of 22.3dB and noise figure of 3.9dB at 35GHz with −23 dBm 1dB input compression point achieved in measurement results. The LNA consumes only 4.4mA of current from a 1.8V supply voltage and takes chip area, with a size of 1.2mm by 0.7mm including pads.