A new leakage-tolerant design for high fan-in domino circuits

F. Moradi, A. Peiravi, H. Mahmoodi
{"title":"A new leakage-tolerant design for high fan-in domino circuits","authors":"F. Moradi, A. Peiravi, H. Mahmoodi","doi":"10.1109/ICM.2004.1434707","DOIUrl":null,"url":null,"abstract":"In this paper, a new leakage-tolerant circuit design technique for high fan-in domino circuits is presented. This technique uses stacking effect to reduce the leakage of the evaluation network of domino gates. It also uses a current mirror in parallel with the evaluation network to reduce the evaluation delay. Depending on the fan-in, the proposed technique exhibits 2.0X to 17.7X leakage and noise tolerance improvement compared to a standard domino counterparts designed in a 70-nm technology node.","PeriodicalId":359193,"journal":{"name":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"30","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2004.1434707","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 30

Abstract

In this paper, a new leakage-tolerant circuit design technique for high fan-in domino circuits is presented. This technique uses stacking effect to reduce the leakage of the evaluation network of domino gates. It also uses a current mirror in parallel with the evaluation network to reduce the evaluation delay. Depending on the fan-in, the proposed technique exhibits 2.0X to 17.7X leakage and noise tolerance improvement compared to a standard domino counterparts designed in a 70-nm technology node.
高扇入多米诺电路的新型耐漏设计
本文提出了一种新的高扇入多米诺电路容漏电路设计技术。该技术利用叠加效应减少了多米诺门评价网络的泄漏。它还使用了一个与评估网络并行的电流镜像,以减少评估延迟。根据扇入的不同,与采用70纳米技术节点设计的标准多米诺骨牌相比,该技术的泄漏和噪声容限提高了2.0到17.7倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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