Incorporation of an engineering mobility model in an accurate analytical I-V description for SOI devices

Abstract

An accurate circuit-simulation-level mobility model for fully depleted SOI MOS devices is presented. It forms a solid basis for further optimization of specific thin-film properties. It is based on a local semiempirical carrier mobility model. The model can include all possible scattering mechanisms. It can also be used for low temperature ranges, where Coulomb scattering is dominant. A satisfactory and well-proved polynomial approximation allows an implementation of the local character of the carrier mobility model in a circuit simulation model. With a hyperbolical tangent dependence of the threshold voltage on the back gate voltage, the basis is formed for an accurate model for thin-film SOI devices.<>