High-performance Al-free diode lasers

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI:10.1109/LEOSST.1997.619229

L. Mawst

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Abstract

Broad area, 100 /spl mu/m-stripe lasers, with Al-free InGaAs-InGaAsP-InGaP active regions operating at a wavelength of 0.98 /spl mu/m (0.81 /spl mu/m), provide high CW powers: 8 W (5 W) and "wallplug" efficiencies: 66 % (45 %). At 0.81 /spl mu/m, the devices are potentially twice as reliable as Al-containing active-layer devices.

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高性能无铝二极管激光器

无al InGaAs-InGaAsP-InGaP有源区工作波长为0.98 /spl mu/m (0.81 /spl mu/m)的宽面积100 /spl mu/m条纹激光器，提供高连续波功率:8 W (5 W)和“壁插”效率:66%(45%)。在0.81 /spl mu/m时，器件的可靠性可能是含al有源层器件的两倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application

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