{"title":"Optimization and Comparison of Various Subnanosecond Bipolar IC's with Low Power Dissipation","authors":"R. Ranfft, H. Rein","doi":"10.1109/ESSCIRC.1980.5468769","DOIUrl":null,"url":null,"abstract":"A simple rapidly converging optimization routine for non saturated digital IC's is described. It yields the minimum delay for a given power dissipation per gate by varying easily controllable technological parameters. The basic gates of various circuit techniques are compared using this routine.","PeriodicalId":168272,"journal":{"name":"ESSCIRC 80: 6th European Solid State Circuits Conference","volume":"115 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 80: 6th European Solid State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.1980.5468769","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
A simple rapidly converging optimization routine for non saturated digital IC's is described. It yields the minimum delay for a given power dissipation per gate by varying easily controllable technological parameters. The basic gates of various circuit techniques are compared using this routine.