Hydrogen Embrittlement and Nano Void Classification within Electroless Copper Deposits

T. Bernhard, E. Steinhäuser, S. Kempa, G. Krilles, R. Massey, F. Brüning
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Abstract

Within the chemical reactions occurring during the deposition of electroless Copper, a low level of Hydrogen gas is evolved, and unless immediately removed, which can be problematic, is prone to accumulation on the freshly formed Cu surface. As further Cu deposition continues, the likelihood of Hydrogen encapsulation is high, and this can lead to a nonporous, low ductility Copper structure with an internal stress characteristic which leads to a high tendency for blistering. All of which are undesirable! This process is typically referred to as “Hydrogen embrittlement” and was often identified during the 1980/1990s as the probable cause for preferential failure of plated through holes in PCBs. With the development of modern electroless Copper baths, the reports of Hydrogen embrittlement related issues have been virtually eradicated, yet it is only recently that published data has offered insight into why this has occurred. As part of a larger ongoing investigation into the formation and presence of nano scaled voids within blind micro via designs, this paper reports on the impact of electrolyte stabilizers and Ni co-deposition on the occurrence and nature of Hydrogen induced voiding. Utilizing a combination of SEM, FIB and TEM techniques, it has been determined that a Ni content in excess of 30ppm in the electroless Copper solution itself, is sufficient to virtually eliminate “Hydrogen induced voids” within the resulting Copper deposit. For the single component stabilizer additives investigated, much as expected, all were found to have a positive effect in terms of grain refinement, yet, when compared to the effect arising from Ni codeposition, they were all unable to fully suppress the reduction of Hydrogen induced voids. With this further understanding, the paper concludes by identifying, classifying and offering route cause formation mechanisms for a range of nano void types that have been observed as part of these investigations as well as routine analysis on failed micro via assembles, all of which is believed to be vital in determining the best solution for void reduction across BMV interfaces and so, maximizing joint reliability.
化学镀铜中的氢脆及纳米空洞分类
在化学铜沉积过程中发生的化学反应中,会产生低水平的氢气,除非立即去除,否则很容易积聚在新形成的铜表面,这可能是一个问题。随着铜的进一步沉积,氢包封的可能性很高,这可能导致无孔、低延展性的铜结构,具有内应力特征,导致起泡的高趋势。所有这些都是不可取的!这个过程通常被称为“氢脆”,在20世纪80/ 90年代经常被确定为pcb中镀通孔优先失效的可能原因。随着现代化学铜浴的发展,氢脆相关问题的报道几乎已经消失,但直到最近才有公布的数据提供了为什么会发生这种情况的见解。作为盲微孔设计中纳米级空隙形成和存在的更大研究的一部分,本文报道了电解质稳定剂和Ni共沉积对氢诱导空隙的发生和性质的影响。利用SEM, FIB和TEM技术的组合,已经确定,在化学铜溶液中,超过30ppm的Ni含量足以消除铜镀层中的“氢诱导空洞”。对于所研究的单组分稳定剂添加剂,正如预期的那样,所有的稳定剂添加剂都对晶粒细化有积极的影响,但是,与Ni共沉积所产生的影响相比,它们都不能完全抑制氢诱导空洞的减少。在进一步了解的基础上,本文通过识别、分类和提供一系列纳米空隙类型的形成机制,以及对失效微通孔组件的常规分析,得出结论,所有这些都被认为是确定减少BMV界面空隙的最佳解决方案,从而最大限度地提高接头可靠性的关键。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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