Design of 2.4 GHz Ultra Wide Band Low Noise Amplifier and Area Reduction Using Active Inductor in 90nm CMOS Technology

Abstract

Low Noise Amplifier (LNA) being the first module of a (Ultra-Wide Band) UWB system, influences the overall performance of the system. The requirement of several inductors in LNA makes it inefficient in respect to chip area in this modern era of technology focused on minimizing the chip space. Thus, Active Inductors made of Metal Oxide Field Effect Transistor (MOSFETs) were introduced to replace the spiral inductors to concise the chip area. The prime focus of this paper is to design an area efficient LNA using active inductor showing the area reduction which is done using the modified diode connected Common Source (CS) topology replacing one of its four spiral inductors with an active inductor. Only the reduction of one spiral inductor shows a huge area reduction of 24% but with the cost of small power gain reduction from 15 dB to 14.84 dB and bandwidth reduction from 676MHz to 645MHz while improving the Noise Figure (NF) from 3.9dB to 2.404dB.The simulations have been carried out in Cadence Spectre using IBM 90nm Complementary Metal Oxide Semiconductor (CMOS) technology.