Characterization of nonlinear carrier dynamics in silicon strip nanowaveguides

I. Aldaya, P. Dainese, A. Gil-Molina, J. Pita, H. Fragnito
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Abstract

Nonlinear carrier recombination dynamics is characterized in a 450 nm × 220 nm silicon nanowire by employing a time-resolved pump-and-probe experiment. Our results show that the recombination rate is faster at the early stages of the decay as compared to the final stages, in agreement with trap-assisted mechanism. We have also demonstrated that by operating at high carrier density, faster excess carrier generation and recombination can be obtained, which we have used to improve the speed of an all-optical FCA based silicon switch from about 7 to 1 ns.
硅带状纳米波导中非线性载流子动力学的表征
采用时间分辨泵浦-探针实验表征了450 nm × 220 nm硅纳米线中的非线性载流子复合动力学。我们的研究结果表明,与最终阶段相比,在衰变的早期阶段重组速率更快,这与陷阱辅助机制一致。我们还证明,通过在高载流子密度下工作,可以获得更快的多余载流子生成和重组,我们已经使用它将基于FCA的全光硅开关的速度从大约7 ns提高到1 ns。
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