A multistandard, triple band wireless transceiver in a 130 nm CMOS technology with integrated PAs for IoT applications

M. Scholl, Tobias Saalfeld, Jan Henning Mueller, Ye Zhang, V. Bonehi, Christoph Beyerstedt, Fabian Speicher, M. Schrey, R. Wunderlich, S. Heinen
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引用次数: 3

Abstract

This work presents a fully integrated multistandard, triple band wireless transceiver with integrated PAs. The narrowband transceiver is suitable for LoRaWAN, IEEE 802.15.4 (ZigBee), 802.15.4g (SUN) and Bluetooth to promote interoperability in future internet-of-things applications. With the presented architecture the unlicensed 2.4 GHz band and the ISM bands at 780–960 MHz and 390–510 MHz are supported with a single 1.5–2.0 GHz frequency synthesizer leading to an area efficient design. The output power for the low band is 20.0 dBm at 55% drain efficiency, for the mid band 24.3 dBm at 44 % drain efficiency and for the 2.4 GHz band 15.3 dBm at 43 % drain efficiency to allow high range applications without need of external PAs. The chip has been fabricated in a 130 nm CMOS technology.
一款多标准、三频段无线收发器,采用130纳米CMOS技术,集成PAs,适用于物联网应用
这项工作提出了一个完全集成的多标准,三波段无线收发器与集成的pa。窄带收发器适用于LoRaWAN, IEEE 802.15.4 (ZigBee), 802.15.4g (SUN)和蓝牙,以促进未来物联网应用中的互操作性。在该架构下,一个1.5-2.0 GHz频率合成器支持未授权的2.4 GHz频段和780-960 MHz和390-510 MHz的ISM频段,从而实现了区域高效设计。低频段输出功率为20.0 dBm,漏极效率为55%,中频段输出功率为24.3 dBm,漏极效率为44%,2.4 GHz频段输出功率为15.3 dBm,漏极效率为43%,无需外部放大器即可实现高范围应用。该芯片采用130纳米CMOS技术制造。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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