Si-Embedded IC Package for W-band Applications: Interconnection Analysis

Abstract

This paper reports the interconnection design and analysis of the embedded IC package. Instead of real chips, we used a dummy chip made of silicon. Dummy chip is GCPW structure and chip's lower ground is not in the chip back but below 20 μm polymer. The thickness of dummy IC is 100 μm and the depth of the cavity is 110 μm. An organic lamination process fills the gap between the inserted chip and the cavity and forms a flat insulating layer. The interconnection for the two inserted dummy ICs was realized using the patterning process, with a very short length of 400 μm. By forming sufficient via holes, the parasitic resonance caused by the cavity is minimized. As a result, the loss of the interconnection is less than 0.25 dB and return loss is more than 30 dB at all measured frequency.