The generation by Gunn diodes based on the GaN, InN, AlN TED's in biharmonic regime

2010 5th International Confernce on Ultrawideband and Ultrashort Impulse Signals Pub Date : 2010-10-25 DOI:10.1109/UWBUSIS.2010.5609131

I. Storozhenko, Y. Arkusha

引用次数: 0

Abstract

The frequency and power capabilities of the nitride semiconductor-?3?5-based Gunn diodes are evaluated using a temperature model of the intervalley electron transfer. Prospects, problems and characteristics of the nitride semiconductors in TED's for the harmonic and biharmonic modes are discussed.

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基于双谐波态GaN, InN, AlN, TED的Gunn二极管的产生

氮化半导体的频率和功率性能利用谷间电子转移的温度模型对5基Gunn二极管进行了评价。讨论了氮化半导体在谐波和双谐波模式下的应用前景、存在的问题和特点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 5th International Confernce on Ultrawideband and Ultrashort Impulse Signals

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