Wafer Probing Issues at Millimeter Wave Frequencies

E. Godshalk
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引用次数: 2

Abstract

With increased wafer probing activity at millimeter wave frequencies, and the maturing of wafer probing technology itself, new issues have arisen. Many of these issues involve phenomena which, although present at lower frequencies, do not cause significant perturbation at measured data below 40 GHz. At higher frequencies wafer probe systems begin to experience the effects of phenomena such as surface waves and sensitivity to the RF properties of the surface below the device under test. This paper presents measured data showing the presence of surface waves and how they interact with wafer probes and coplanar waveguide transmission lines. Methods for minimizing these interactions are explored and quantified. Finally, the impact of surface wave effects on wafer calibrations are addressed.
毫米波频率下晶圆探测问题
随着毫米波频率晶圆探测活动的增加,以及晶圆探测技术本身的成熟,新的问题也随之出现。许多这些问题涉及的现象,虽然存在于较低的频率,但对低于40千兆赫的测量数据不会造成显著的扰动。在更高的频率下,晶圆探头系统开始经历表面波和对被测器件下方表面RF特性的敏感性等现象的影响。本文给出了显示表面波存在的测量数据,以及它们如何与晶圆探头和共面波导传输线相互作用。探索和量化最小化这些相互作用的方法。最后,讨论了表面波效应对晶圆校准的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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