{"title":"Electrical Properties of Hexagonal SiC Doped with N, B or Al","authors":"J. A. Lely, F. A. Kröger","doi":"10.1007/978-3-663-02557-3_64","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1958-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Halbleiter und Phosphore","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1007/978-3-663-02557-3_64","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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