Si-MESFET technologies for low drop out regulators

Abstract

Power conditioning circuits based on high breakdown voltage silicon MESFETs are being developed as an alternative to existing approaches that use CMOS or bipolar transistors. Results are presented from simulations of a low drop out (LDO) regulator as an example of the Si-MESFET technology. The LDO regulator exploits the depletion mode behavior of an n-channel MESFET to achieve low drop out voltages with impressive power supply rejection. The high voltage compliance of the Si-MESFETs (5-50V) make them ideally suited for a wide range of commercial and defense related LDO regulator applications.