Monire Sadat Miri, J. Ghahramani, M. Soleimani Farrokh, S. Rezakhani, A. M. Kordalivand
{"title":"Design and simulation of HBT differential Low Noise Amplifier and LC active filter","authors":"Monire Sadat Miri, J. Ghahramani, M. Soleimani Farrokh, S. Rezakhani, A. M. Kordalivand","doi":"10.1109/ICSENGT.2011.5993423","DOIUrl":null,"url":null,"abstract":"This essay presents utilizing of differential structures for microwave applications. First of all, a LNA single-ended was designed; then the basic circuit of the differential LNA was discussed finally, we illustrate the benefits of utilizing a differential approach with the design instants of a Low Noise Amplifier, a differential LC filter and a floating negative resistance topology. The LNA and active Filter were designed in the BiCMOS HBT process. ADS2010 was simulated to obtain the preliminary results.","PeriodicalId":346890,"journal":{"name":"2011 IEEE International Conference on System Engineering and Technology","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference on System Engineering and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENGT.2011.5993423","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This essay presents utilizing of differential structures for microwave applications. First of all, a LNA single-ended was designed; then the basic circuit of the differential LNA was discussed finally, we illustrate the benefits of utilizing a differential approach with the design instants of a Low Noise Amplifier, a differential LC filter and a floating negative resistance topology. The LNA and active Filter were designed in the BiCMOS HBT process. ADS2010 was simulated to obtain the preliminary results.