Periodic-Doubling Bifurcation of a Circuit With a Fractional-Order Memristor

Y. Yu, Y. Chen
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Abstract

A new fractional-order current-controlled memristor is proposed by the fact of the memory loss. Excited by sinusoidal current, the generalized hysteresis loops of the new fractional-order memristor are no longer symmetrical to the origin and the time to reach the steady state is longer than the integer-order memristor’s. The dynamical behaviors of a new fractional-order memristive circuit system whose state variables have different derivation orders are investigated by theoretical analyses and simulated numerically. It is shown that the new fractional-order memristive circuit system goes into chaos by period-doubling bifurcation; the periodic windows are induced by the discontinuous change of derivative order between variables.
分数阶忆阻器电路的周期倍分岔
针对记忆丢失的问题,提出了一种新的分数阶电流控制忆阻器。在正弦电流激励下,分数阶忆阻器的广义磁滞回线不再与原点对称,达到稳态的时间比整数阶忆阻器长。通过理论分析和数值模拟,研究了一种状态变量具有不同阶数的新型分数阶记忆电路系统的动力学行为。结果表明,新的分数阶记忆电路系统通过倍周期分岔进入混沌;周期窗口是由变量间导数阶的不连续变化引起的。
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