Modification of Nonlinear Susceptibilities in Anisotropically Nanostructured Silicon

2005 Quantum Electronics and Laser Science Conference Pub Date : 2005-05-27 DOI:10.1109/QELS.2005.1549166

S. Zabotnov, L. Golovan, S. Konorov, A. Fedotov, A. Zheltikov, V. Timoshenko, P. Kashkarov, G. Petrov, V. Yakovlev

引用次数: 0

Abstract

The cubic susceptibility tensor properties in porous silicon with strong in-plane birefringence caused by form anisotropy is considered. Polarization-sensitive third-harmonic generation in such media reveals a modification in the cubic susceptibility tensor

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各向异性纳米结构硅的非线性磁化率修饰

研究了由形态各向异性引起的强面内双折射多孔硅的三次磁化率张量性质。在这种介质中极化敏感的三次谐波产生揭示了三次磁化率张量的修正

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2005 Quantum Electronics and Laser Science Conference

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